GaAs, Growing Method: VGF ,(111)A, Zn-doped, P-type, 2" dia x 0.5mm, 2sp - GAZncA50D05C2US5 Battery Consumables Outside Diameter 1/4" Inside Diameter

Outside Diameter 1/4" Inside Diameter 0

4% of full scale reading

The saw can be used inside a glovebox with N2 gas

30mm Note:

GaAs, Growing Method: VGF ,(111)A, Zn-doped, P-type, 2" dia x 0.5mm, 2sp - GAZncA50D05C2US5 Battery Consumables Outside Diameter 1/4" Inside DiameterGaAs single crystal wafer Growing Method: VGF Orientation: (111)A Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: Zn doped Conductor type: S C P Resistivity: (6. 82 7. 58)E 3 ohm. cm Carrier Concentration: (1. 07 1. 26)E19cm^ 3 Mobility: 73 77 cm^2 V. S Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces